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BLA6H0912-500
LDMOS avionics radar power transistor
Rev. 03 -- 30 March 2010 Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 128 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (MHz) 960 to 1200 VDS (V) 50 PL (W) 450 Gp (dB) 17 D (%) 50 tr (ns) 20 tf (ns) 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 128 s with of 10 %: Output power = 450 W Power gain = 17 dB Efficiency = 50 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (960 MHz to 1215 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
NXP Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Graphic symbol
1
2 3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLA6H0912-500 Description flanged ceramic package; 2 mounting holes; 2 leads Version SOT634A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 100 +13 54 +150 200 Unit V V A C C
5. Thermal characteristics
Table 5. Symbol Zth(j-c) Thermal characteristics Parameter transient thermal impedance from junction to case Conditions Tcase = 85 C; PL = 450 W tp = 32 s; = 2 % tp = 128 s; = 10 % tp = 2400 s; = 6.4 % 0.03 0.08 0.2 K/W K/W K/W Typ Unit
BLA6H0912-500_3
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Product data sheet
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BLA6H0912-500
LDMOS avionics radar power transistor
6. Characteristics
Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 270 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 405 mA Min 100 1.3 53.5 2.50 Typ 1.8 64 3.5 70 Max Unit 2.2 3.6 360 85 V V A A nA m V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA
4.55 S
drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 14.18 A
Table 7. RF characteristics Mode of operation: pulsed RF; f = 960 MHz to 1215 MHz; tp = 128 s; = 10 %; RF performance at VDS = 50 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit. Symbol PL VDS Gp RLin D Pdroop(pulse) tr tf Parameter output power drain-source voltage power gain input return loss drain efficiency pulse droop power rise time fall time PL = 450 W PL = 450 W PL = 450 W PL = 450 W PL = 450 W PL = 450 W PL = 450 W Conditions Min Typ Max Unit 16 7 45 450 17 11 50 0 20 6 50 0.3 50 50 W V dB dB % dB ns ns
6.1 Ruggedness in class-AB operation
The BLA6H0912-500 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: f = 960 MHz, 1030 MHz, 1090 MHz or 1215 MHz. VDS = 50 V; IDq = 100 mA; PL = 450 W; tp = 128 s; = 10 %.
BLA6H0912-500_3
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
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NXP Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
7. Application information
7.1 Impedance information
Table 8. Typical impedance Typical values per section unless otherwise specified. f MHz 960 1030 1090 1140 1215 ZS 1.36 - j1.45 1.54 - j1.25 1.67 - j1.22 1.68 - j1.29 1.43 - j1.42 ZL 1.49 - j1.48 1.51 - j1.45 1.36 - j1.47 1.15 - j1.41 0.79 - j1.17
drain ZL gate ZS
001aaf059
Fig 1.
Definition of transistor impedance
BLA6H0912-500_3
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Product data sheet
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NXP Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
7.2 Application circuit
C2
C5
C12
C13
C1
R1
C3
C4
C14
C15
R2
C6
C8
C11
C7
001aal599
Printed-Circuit Board (PCB) material: Duroid 6006 with r = 6.15 and thickness = 0.64 mm. See Table 9 for list of components.
Fig 2.
Component layout
Table 9. List of components See Figure 2 for component layout. Component C1, C3 C2, C3, C14 C4, C13 C6, C7 C5, C8, C11, C12 C15 R1 R2
[1] [2]
Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor SMD resistor metal film resistor
Value 10 F; 35 V 39 pF 1 nF 6.8 pF 82 pF 47 F; 63 V 56 51
[1] [1] [2] [2]
Remarks
SMD 0603
American Technical Ceramics type 100B or capacitor of same quality. American Technical Ceramics type 800B or capacitor of same quality.
BLA6H0912-500_3
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
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NXP Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
8. Test information
8.1 Performance curves
600 PL (W) 400
(1) (2) (3) (4) (5) 001aal600
20 Gp (dB) 16
(1) (2) (3) (4) (5)
001aal601
12
8 200 4
0 0 6 12 Pi (W) 18
0 0 200 400 PL (W) 600
VDS = 50 V; IDq = 100 mA; tp = 128 s; = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz
VDS = 50 V; IDq = 100 mA; tp = 128 s; = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz
Fig 3.
Load power as a function of input power; typical values
Fig 4.
Power gain as a function of load power; typical values
BLA6H0912-500_3
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 30 March 2010
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NXP Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
70 D (%) 60 50 40 30 20
(1) (2) (3) (4) (5)
001aal602
20 Gp (dB) 18 Gp
001aal603
70 D (%) 60
16
D
50
14
40
12 10 0 0 200 400 PL (W) 600 10 950
30
1050
1150 f (MHz)
20 1250
VDS = 50 V; IDq = 100 mA; tp = 128 s; = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz
VDS = 50 V; IDq = 100 mA; tp = 128 s; = 10 %.
Fig 5.
Drain efficiency as a function of load power; typical values
Fig 6.
Power gain and drain efficiency as function of frequency; typical values
16 RLin (dB) 12
001aal604
8
4
0 950
1050
1150 f (MHz)
1250
PL = 500 W; VDS = 50 V; IDq = 100 mA; tp = 128 s; = 10 %.
Fig 7.
Input return loss as a function of frequency; typical values
BLA6H0912-500_3
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 30 March 2010
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BLA6H0912-500
LDMOS avionics radar power transistor
8.2 Curves measured under Mode-S ELM pulse-conditions
600 PL (W) 400
001aal605
20 Gp (dB)
001aal606
(1)
16
(1) (2)
(2)
12
8 200 4
0 0 4 8 12 16 Pi (W) 20
0 0 200 400 PL (W) 600
f = 1030 MHz; VDS = 50 V; IDq = 100 mA. (1) Th = 25 C (2) Th = 65 C
f = 1030 MHz; VDS = 50 V; IDq = 100 mA. (1) Th = 25 C (2) Th = 65 C
Fig 8.
Load Power as a function of input power; typical values
Fig 9.
Power gain as a function of load power; typical values
60 D (%)
001aal607
(2)
(1)
40
20
0 0 200 400 PL (W) 600
f = 1030 MHz; VDS = 50 V; IDq = 100 mA. (1) Th = 25 C (2) Th = 65 C
Fig 10. Drain efficiency as function of load power; typical values
BLA6H0912-500_3
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
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BLA6H0912-500
LDMOS avionics radar power transistor
8.3 Curves measured under Mode-S interrogator pulse-conditions
600 PL (W) 400
001aal608
20 Gp (dB)
001aal609
(1)
16
(1) (2)
(2)
12
8 200 4
0 0 4 8 12 16 Pi (W) 20
0 0 200 400 PL (W) 600
f = 1030 MHz; VDS = 50 V; IDq = 100 mA. (1) Th = 25 C (2) Th = 65 C
f = 1030 MHz; VDS = 50 V; IDq = 100 mA. (1) Th = 25 C (2) Th = 65 C
Fig 11. Load Power as a function of input power; typical values
Fig 12. Power gain as a function of load power; typical values
50 D (%) 40
001aal610 (1) (2)
30
20
10
0 0 200 400 PL (W) 600
f = 1030 MHz; VDS = 50 V; IDq = 100 mA. (1) Th = 25 C (2) Th = 65 C
Fig 13. Drain efficiency as function of load power; typical values
BLA6H0912-500_3
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 30 March 2010
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BLA6H0912-500
LDMOS avionics radar power transistor
9. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads SOT634A
D
A F
3
D1
U1 q C
B c
L
1
U2
p w1 M A M B M
E1
E
A
L
2
b
w2 M C M
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.83 3.68 0.190 0.145 b 12.82 12.57 0.505 0.495 c 0.15 0.08 0.006 0.003 D 22.58 22.12 0.889 0.871 D1 22.56 22.15 0.888 0.872 E E1 F 1.14 0.89 0.045 0.035 L 5.33 4.32 0.210 0.170 p 3.38 3.12 0.133 0.123 Q 1.70 1.45 0.067 0.057 q 27.94 1.100 U1 34.16 33.91 1.345 1.335 U2 13.84 13.59 0.545 0.535 w1 0.25 0.010 w2 0.51 0.020
13.34 13.34 13.08 13.08 0.525 0.525 0.515 0.515
OUTLINE VERSION SOT634A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 01-11-27 03-05-01
Fig 14. Package outline SOT634A
BLA6H0912-500_3 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
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BLA6H0912-500
LDMOS avionics radar power transistor
10. Abbreviations
Table 10. Acronym DME ELM JTIDS LDMOS Mode-S RF SMD TACAN TCAS VSWR Abbreviations Description Distance Measuring Equipment Extended Length Message Joint Tactical Information Distribution System Laterally Diffused Metal-Oxide Semiconductor Mode Select Radio Frequency Surface Mounted Device TACtical Air Navigation Traffic Collision Avoidance System Voltage Standing-Wave Ratio
11. Revision history
Table 11. Revision history Release date 20100330 Data sheet status Product data sheet Change notice Supersedes BLA6H0912-500_2 Document ID BLA6H0912-500_3 Modifications:
* * * * * * * * * *
Table 7 on page 3: VCC changed into VDS. Table 1 on page 1: changed value of PL. Table 4 on page 2: changed minimum value of VGS. Table 5 on page 2: changed several values. Table 6 on page 3: changed several values. Table 7 on page 3: changed several values. Section 6.1 on page 3: changed several values. Table 8 on page 4: changed several values. Added Section 7.2 on page 5. Added Section 8 on page 6. Product data sheet Objective data sheet BLA6H0912-500_1 -
BLA6H0912-500_2 BLA6H0912-500_1
20100302 20090305
BLA6H0912-500_3
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
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BLA6H0912-500
LDMOS avionics radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the
(c) NXP B.V. 2010. All rights reserved.
12.3 Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
BLA6H0912-500_3
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Product data sheet
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NXP Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLA6H0912-500_3
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 30 March 2010
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BLA6H0912-500
LDMOS avionics radar power transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 8.1 8.2 8.3 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Performance curves . . . . . . . . . . . . . . . . . . . . . 6 Curves measured under Mode-S ELM pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 8 Curves measured under Mode-S interrogator pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 March 2010 Document identifier: BLA6H0912-500_3

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